Data for Field-Effect Transistors from Artificial Charged Domain Walls in Stacked van der Waals Ferroelectric α-In2Se3

Room-temperature transfer curves; Benchmarking conductance; STEM images of charged domain walls; Temperature-dependent transfer curves; Scaling of conductance, hopping length, threshold voltage, trap density, and field-effect mobility with temperature; Magnetotransport data; Optical, AFM, and PFM image of different field-effect transistors; STEM images of contacts; Output and transfer curves of FETs; Additional STEM images of charged domain walls; Temperature scaling of subthreshold swing and threshold voltage difference; Comparison of maximum field-effect mobility for different structures