Wide-tuning-range Littman-type external-cavity diode laser for spectroscopy of GaAs band-edge and impurity-level transitions

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Authors: Takayuki Ishida, Michio Ikezawa
Cited by: 1
References: 15

Abstract

We report the design and implementation of a compact external-cavity diode laser (ECDL) for wavelength-tunable excitation around the GaAs bandgap. By modifying a commercial laser kit and redesigning key optomechanics, we achieve wide wavelength tunability over 790-870 nm. We describe a geometrical-optics design procedure that accounts for the tuning-mirror pivot constraint, together with practical assembly and interference-mitigation measures for wavelength-scanned operation. The ECDL operates in a single longitudinal mode with a linewidth below several tens of MHz (measurement-limited) and delivers an optical output power of tens of mW across the tuning range. Free-running frequency drifts are on the order of 50 MHz over tens of seconds and 500 MHz over tens of minutes without active feedback.

Fields of Study & Subjects

Spectroscopy and Laser Applications Semiconductor Quantum Structures and Devices Semiconductor Lasers and Optical Devices

Publication details

Journal / source
Applied Optics
Publisher
Optica Publishing Group
Volume
65
Issue
14
Pages
4535–4535
Publication date
13 April 2026
Language
EN