InGaAs membrane plasmonic photodetector with Ni-InGaAs alloy integrated on Si waveguide

Optics Express 2026 Open access

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Authors: Kentaro Komatsu, Taketoshi Nakayama, Tomohiro Akazawa, Yosuke Wakita, Hiroya Sakumoto, Chao Zhang, Yuto Miyatake, S. Monfray, F. Bœuf, Rui Tang, Kasidit Toprasertpong, Shinichi Takagi
+1 more Mitsuru Takenaka
DOI: 10.1364/oe.586807
Cited by: 0
References: 29

Abstract

We propose III-V/Si hybrid plasmonic waveguide photodetector incorporating an InGaAs membrane. We confirmed that Ni-InGaAs alloy functions effectively as an electrode for a plasmonic waveguide. Utilizing Ni-InGaAs alloy enabled the integration of plasmonic waveguide photodetectors into the Si photonics platform through a simplified fabrication process. We achieved a responsivity of 0.13 A/W at 1 V with a dark current of 400 nA and confirmed a 32.1 Gbit/s clear eye diagram, demonstrating the potential for high speed InGaAs plasmonic photodetector in Si photonics.

Fields of Study & Subjects

Photonic and Optical Devices Plasmonic and Surface Plasmon Research Semiconductor Lasers and Optical Devices

Publication details

Journal / source
Optics Express
Volume
34
Issue
3
Pages
3932–3932
Publication date
16 January 2026
Language
EN