Broadband 205-GHz vertical-illumination photodiode enabled by double field control layers

Optics Express 2026 Open access

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Authors: Yuki Yamada, Ikue Hiraoka, Yoshiho Maeda, Shohei Kosuga, Takahiro nakamura, Yusuke Araki, Fumito Nakajima
DOI: 10.1364/oe.593211
Cited by: 1
References: 19

Abstract

We demonstrate a high-speed, high-responsivity vertical-illumination InGaAs/InP photodiode (PD). Precise control of the internal electric-field profile using p- and n-type field-control layers reduces the electron transit time by using drift velocity overshoot, resulting in 3-dB bandwidth of 205 GHz. Furthermore, the device exhibited a high responsivity of 0.51 A/W while maintaining high 3-dB bandwidth by employing interference-based absorption enhancement technique. A low dark current of approximately 1 pA with excellent uniformity and high optical-power tolerance with a 1-dB compression current of 10 mA at 200 GHz are also demonstrated. Furthermore, eye patterns were obtained at data rates exceeding 180 Gbaud.

Fields of Study & Subjects

Advanced Photonic Communication Systems Superconducting and THz Device Technology Photonic and Optical Devices

Publication details

Journal / source
Optics Express
Publisher
Optica Publishing Group
Volume
34
Issue
9
Pages
16286–16286
Publication date
17 April 2026
Language
EN