Efficient 180 Gb/s NRZ C-band silicon microring modulator exceeding 100 GHz bandwidth

Optics Letters 2026

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Authors: siyan He, Shuxiao Wang, Fan Xu, Aolong Sun, GAO XIANGYU, Junwen Zhang, Wei Wang, Yan Cai
DOI: 10.1364/ol.585234
Cited by: 2
References: 16

Abstract

We design and experimentally demonstrate a silicon microring modulator working in C-band based on a commercial silicon photonics platform. The device achieves a 3-dB electro-optic bandwidth exceeding 100 GHz and a low V π ·L of 0.4 V·cm at −2 V bias, enabling advanced modulation formats of 180 Gb/s NRZ and 280 Gb/s PAM-4 to operate below the 20% soft-decision forward error correction threshold of 2.4 × 10 −2 , aided by Volterra Nonlinear Equalization and Maximum Likelihood Sequence Estimation.

Fields of Study & Subjects

Photonic and Optical Devices Advanced Photonic Communication Systems Optical Network Technologies

Publication details

Journal / source
Optics Letters
Publisher
Optica Publishing Group
Volume
51
Issue
5
Pages
1219–1219
Publication date
6 February 2026
Language
EN