Near-athermal silicon nitride 4-channel O-band (de)multiplexer with ~2 pm/K temperature sensitivity

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Authors: Shiqi Zhang, Donghao Li, Luyang Liu, Haojie Xue, Qian Wang, Jinglei Qin, Mengjia Jin, Lei Zhang
Cited by: 1
References: 16

Abstract

We demonstrate a 4-channel O-band (de)multiplexer based on silicon nitride (SiN) Mach–Zehnder interferometer (MZI) lattice filters. By utilizing geometry-dependent modal behavior to tailor the effective thermo-optic coefficient (d n eff /d T ) of the SiN waveguides, near-athermal operation is achieved against global temperature fluctuations. The device architecture utilizes Hermite-curve-assisted folded arms to ensure a compact footprint while maintaining high sensitivity to local micro-heaters for power-efficient channel alignment. Fabricated on an 8-inch wafer with 300-nm-thick SiN, the device exhibits a significantly suppressed temperature sensitivity of ~2 pm/K. The integrated phase shifters achieve a low π-phase-shift power of ~30 mW. Comparative analysis with state-of-the-art SiN platforms highlights the superior performance of this design in both passive thermal stability and active tuning efficiency.

Fields of Study & Subjects

Photonic and Optical Devices Nanowire Synthesis and Applications Advancements in Semiconductor Devices and Circuit Design

Publication details

Journal / source
Optics Letters
Publisher
Optica Publishing Group
Volume
51
Issue
12
Pages
3377–3377
Publication date
26 May 2026
Language
EN