NO BEAM - samples preparation for HC6338
Abstract
Substitution of Te surface layer of 2D material Te-FeGe-Te, by exposure to H2S in the INS2 UHV chamber (BM32 EH3). Monitoring of the process by electron diffraction.
Fields of Study & Subjects
2D Materials and Applications
Chalcogenide Semiconductor Thin Films
Crystal Structures and Properties
Publication details
- Journal / source
- European Synchrotron Radiation Facility
- Publication date
- 20 January 2026
- Language
- EN
- Document type
- Dataset