NO BEAM - samples preparation for HC6338

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Authors: Davide Benettin, Frédéric Bonell, Lucio Martinelli, Roberto Sant
Cited by: 0

Abstract

Substitution of Te surface layer of 2D material Te-FeGe-Te, by exposure to H2S in the INS2 UHV chamber (BM32 EH3). Monitoring of the process by electron diffraction.

Fields of Study & Subjects

2D Materials and Applications Chalcogenide Semiconductor Thin Films Crystal Structures and Properties

Publication details

Journal / source
European Synchrotron Radiation Facility
Publication date
20 January 2026
Language
EN
Document type
Dataset