X-ray Beam Induced Current Mapping with a new Lock In Amplifier
Abstract
We will attempt to measure X-ray Beam Induced Current (XBIC) with the Lock-In Amplifier from ID16B, where it is frequently used for this technique. We aim to observe the correlation between electrical and structural changes in (Al)GaN Si High Electron Mobility Transistors, where both have been observed separately, but not been successfully correlated so far. This will aid in establishing the XBIC technique for the ID01 user mode
Fields of Study & Subjects
Advanced X-ray Imaging Techniques
Integrated Circuits and Semiconductor Failure Analysis
Electron and X-Ray Spectroscopy Techniques
Publication details
- Journal / source
- European Synchrotron Radiation Facility
- Publication date
- 11 February 2026
- Language
- EN
- Document type
- Dataset