SXDM on GeSn nanowires and GaN reference structure
Abstract
We will employ Scanning X-ray Diffraction Microscopy with the mininmal resolution of ~25 nm to map the strain and stoichiometry in GeSn nanowires. The orientation has been pre-determined at BM32, allowing to align them at ID01. Moreover, we will perform mapping of the complete strain tensor in a GaN/Si heterostructure, to be correlated to a series of strain mapping techniques including DFXM, EBSD and HR-STEM
Fields of Study & Subjects
X-ray Diffraction in Crystallography
Advanced X-ray Imaging Techniques
Nanowire Synthesis and Applications
Publication details
- Journal / source
- European Synchrotron Radiation Facility
- Publication date
- 14 February 2026
- Language
- EN
- Document type
- Dataset