Formation and Morphology of Cu nanofilms Using DC and RF Modes of a Magnetron Sputtering Device

In this paper, we provide detailed information on the mechanism of formation of thin copper films in different modes of magnetron sputtering on the surface of single-crystal silicon by the solid-phase ion-plasma method. The dependence of the sputtering rate of Cu/Si films obtained by the direct current magnetron method and the radio frequency magnetron method on the sputtering time and the distance between the target and the substrate was studied. The surface morphology and electrophysical properties of thin copper films were analyzed. At a distance between the base and the target of 90 mm, the sputtering rate had a maximum value of 21 ˚A/sec. Polycrystalline films with a thickness of 90 nm and 110 nm were formed in the DCMS and RFMS modes in 2.5 minute. It was found that the DCMS mode is the optimal method for forming polycrystalline copper films. The RFMS mode can be used to form copper silicide films. These studies will serve as a basis for the formation of copper nanofilms used in the field of nanoelectronics in the future.