Role of vacancies and silicon doping in modulating the electrical transport of metal interconnects

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Authors: Jiamiao Yang, Shunbo Hu
Cited by: 0
References: 28

Fields of Study & Subjects

Copper Interconnects and Reliability Semiconductor materials and interfaces Semiconductor materials and devices

Publication details

Journal / source
MRS Communications
Volume
16
Issue
3
Pages
855–862
Publication date
4 March 2026
Language
EN