Role of vacancies and silicon doping in modulating the electrical transport of metal interconnects
Fields of Study & Subjects
Copper Interconnects and Reliability
Semiconductor materials and interfaces
Semiconductor materials and devices
Publication details
- Journal / source
- MRS Communications
- Volume
- 16
- Issue
- 3
- Pages
- 855–862
- Publication date
- 4 March 2026
- Language
- EN