Evolution of optical characteristics of HfO2 and Ge-doped HfO2 thin films upon thermal treatment in inert atmosphere

MRS Advances 2026

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Authors: D. Khomenkov, L. Melnichuk, F. Gourbilleau, L. Khomenkova, O. Melnichuk
DOI: 10.1557/s43580-026-01625-4
Cited by: 1
References: 6

Fields of Study & Subjects

Semiconductor materials and devices Advancements in Semiconductor Devices and Circuit Design Ferroelectric and Negative Capacitance Devices

Publication details

Journal / source
MRS Advances
Publisher
Springer Science and Business Media LLC
Volume
11
Issue
8
Pages
873–877
Publication date
6 April 2026
Language
EN