A capacitively coupled SiC MOSFET gate driver using dv/dt enhanced OOK transmitter with CMTI of 220 V/ns

IEICE Electronics Express 2026 Open access

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Authors: Jie Li, Jicun Lu, Ruifang Tie, Danping Yang, Zeyan Wu, Zhenhai Chen, Cheng Jin, Zhiguo Yu, Xiaofeng Gu, Yongshen Yin, Zongguang Yu, Hail Liang
DOI: 10.1587/elex.23.20260019
Cited by: 1
References: 30

Abstract

This paper presents a high Common Mode Transient Immunity (CMTI) modulation circuit for a capacitively coupled gate driver. It proposes an enhanced on-off keying (OOK) transmitter architecture with integrated common-mode (CM) substrate modulation. Through collaboration with the CM interference detection circuit, transmission accuracy and CMTI are improved without additional delay.Test results show the prototype driver achieves 220 V/ns CMTI, 20 ns propagation delay, the rise and fall times of 10 ns and 12 ns respectively under 15 V supply voltage, and the rise and fall time of 22 ns and 24 ns respectively under 30 V supply voltage with 2.5 MHz frequency and 3.5 nF load.

Fields of Study & Subjects

Silicon Carbide Semiconductor Technologies Advancements in Semiconductor Devices and Circuit Design Advancements in PLL and VCO Technologies

Publication details

Journal / source
IEICE Electronics Express
Publisher
Institute of Electronics, Information and Communications Engineers (IEICE)
Volume
23
Issue
8
Pages
20260019–20260019
Publication date
24 February 2026
Language
EN