Novel Trench Gate P-Channel RC-IGBT on SOI for Common-Emitter Type Complementary Inverter

A P-channel RC-LIGBT is required to configure a common-emitter complementary inverter instead of the conventional N-N inverter consisting of N-channel RC-LIGBTs on the high and the low side. However, the static breakdown voltage and the conductivity of the P-channel is low in comparison with those of the N-channel. To improve the conductivity and the static and dynamic breakdown voltages, the novel trench type P-channel RC-LIGBT with the dual drift layer on SOI is introduced in addition to the N-channel. It is demonstrated that the newly proposed P-channel RC-LIGBT can improve the conductivity and secure the static breakdown voltage more than 200 V by the trench gate with rounded trench edges and the dual drift structure consisting of a P drift region with a P top layer and an N drift region. Moreover, the reverse conduction is achieved by two PN diodes formed in series by shorting the floating P and N bases of the embedded thyristor through an ohmic contact with metal. This RC-LIGBT structure can avoid the snapback in the forward conduction. With the proposed P-channel including the N-channel RC-LIGBTs on SOI, it is verified that the common-emitter complementary half bridge inverter can operate without the penetration current and it is found that the additional P top layer on the P drift can suppress the current oscillation observed in the waveform of the complementary inverter during the turn-off of the P-channel having the dual drift structure.