Resistive Switching Properties of Tin Oxide Film Fabricated Using Mist Chemical Vapor Deposition

IEICE Transactions on Electronics 2026 Open access

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Authors: Sumio Sugisaki, Takahito Imai, Tokiyoshi Matsuda, Hidenori KAWANISHI, Mutsumi KIMURA
DOI: 10.1587/transele.2026ecs6002
Cited by: 1

Abstract

In this work, we investigate resistive switching properties of tin oxide (SnOx) memristors. The SnOx resistance change layer was deposited using mist chemical vapor deposition (mist CVD), which is an open-air non-vacuum process. The fabricated device exhibits stable I-V curve behavior for 500 cycles, with an ON/OFF ratio of approximately 10 and forming-free resistive switching characteristics.

Fields of Study & Subjects

Semiconductor materials and devices Transition Metal Oxide Nanomaterials ZnO doping and properties

Publication details

Journal / source
IEICE Transactions on Electronics
Publisher
Institute of Electronics, Information and Communications Engineers (IEICE)
Publication date
1 January 2026
Language
EN