All data used in the work "On-wafer characterisation of 1300 nm InAs quantum dot laser uniformity over 150 mm substrates"

This study investigates the uniformity and performance of 1300 nm InAs quantum dot (QD) edge-emitting lasers fabricated on 150 mm GaAs substrates for optical communication applications. The research combines post-growth photoluminescence (PL) mapping with wafer-scale electrical and optical characterisation of etched-facet laser devices to evaluate the relationship between epitaxial growth uniformity and laser performance. A range of cavity lengths were assessed across the wafer, with measurements including threshold current, lasing wavelength, spontaneous emission spectra, and device yield. The work demonstrates strong correlations between PL measurements and laser characteristics, enabling rapid, non-destructive assessment of wafer quality and device uniformity. Additional comparisons between on-wafer etched-facet lasers, cleaved-facet lasers, and segmented-contact test structures were used to determine etched-facet reflectivity and identify fabrication factors influencing device performance. The results provide insight into large area quantum dot epitaxy, manufacturing yield, and scalable characterisation methodologies relevant to high-volume production of O-band semiconductor lasers and future heterogeneous integration with silicon photonics. The dataset contains wafer-scale photoluminescence, electroluminescence, threshold current, threshold current densities, lasing wavelength, gain and absorption measurements collected from InAs quantum dot laser structures grown by molecular beam epitaxy on 150 mm GaAs wafers. Data were acquired to quantify spatial variations in material quality and device performance and to assess the suitability of on-wafer etched-facet characterisation for manufacturing-scale process monitoring.