Free-Carrier Absorption in InxGa1-xAs crystals for Alloy-Disorder Scattering

Radioelectronics Nanosystems Information Technologies 2026 Open access

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Authors: Guseyn B. Ibragimov, Raida Zabit Ibaeva, B.G. Ibragimov, Mobil V. Kazimov, Mehman M. Shirinov
DOI: 10.17725/j.rensit.2026.18.135
Cited by: 0

Abstract

It has been demonstrated that disorder in the crystal lattice has a significant effect on the free carrier absorption of light in InxGa1-xAs solid solutions. The decrease in γ, which characterizes the scattering mechanism of charge carriers, in solid solutions is explained by the fact that additional absorption, caused by the disorder of the alloy potential, leads to a weaker dependence of the absorption coefficient on the wavelength. It is shown that in InxGa1-xAs, at low electron concentrations, free carrier absorption due to potential disorder plays a significant role. The relative contribution of this mechanism depends on the energy of the absorbed photon and the temperature.

Fields of Study & Subjects

Semiconductor Lasers and Optical Devices Advanced Semiconductor Detectors and Materials Semiconductor Quantum Structures and Devices

Publication details

Journal / source
Radioelectronics Nanosystems Information Technologies
Volume
18
Issue
1
Pages
135–142
Publication date
15 February 2026
Language
EN