Research data supporting "Achieving high ON state current through ferroelectric polarization-dependent interfacial resistance switching in undoped orthorhombic HfO2 films"
Abstract
These are the raw data for the referenced publication. The data consists of csv and Excel files, containing electrical measurements, transmission electron micrographs, and piezoresponse force microscopy data. Each folder has a README file.
Fields of Study & Subjects
Ferroelectric and Negative Capacitance Devices
Advanced Memory and Neural Computing
Semiconductor materials and devices
Publication details
- Journal / source
- Apollo (University of Cambridge)
- Publication date
- 12 March 2026
- Language
- EN
- Document type
- Dataset