Research data supporting "Achieving high ON state current through ferroelectric polarization-dependent interfacial resistance switching in undoped orthorhombic HfO2 films"

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Authors: Markus Hellenbrand, Nuno Estrócio, Ji Soo Kim, Babak Bakhit, Marian Cosmin Istrate, Corneliu Ghica, Tiago Rebelo, Nives Strkalj, Abin Varghese, Bernardo Almeida, Luís S Marques, Bipin Rajendran
+2 more Judith L. MacManus‐Driscoll, José P.B. Silva
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Abstract

These are the raw data for the referenced publication. The data consists of csv and Excel files, containing electrical measurements, transmission electron micrographs, and piezoresponse force microscopy data. Each folder has a README file.

Fields of Study & Subjects

Ferroelectric and Negative Capacitance Devices Advanced Memory and Neural Computing Semiconductor materials and devices

Publication details

Journal / source
Apollo (University of Cambridge)
Publication date
12 March 2026
Language
EN
Document type
Dataset