Physikalische und technologische Grundlagen zur Gewinnung von ZnS:Mn Nanopulver, Metallopolymeren und Heterostrukturen auf Basis von nanoporösem Silizium

Silicon has served as the cornerstone of modern electronics for decades due to its low cost and mature processing technologies.However, its physical limitations -in particular its inability to operate reliably at high temperatures, under intense radiation and in demanding optoelectronic regimes -necessitate the exploration of wide-bandgap semiconductors.Silicon carbide (SiC), gallium oxide (β-Ga₂O₃) and zinc oxide (ZnO) are among the most promising candidates for next-generation high-performance device.A central challenge is their integration with silicon platforms.Direct deposition of SiC or β-Ga₂O₃ on crystalline Si leads to severe lattice and thermal-expansion mismatches, high defect densities and degraded electronic properties.In this context, our study introduced porous silicon as a compliant buffer and examined the additional effect of an intermediate SiC layer.Using RF magnetron sputtering, we fabricated and analysed four heterostructures:100) and Ga₂O₃/SiC/por-Si/Si(111).Scanning electron microscopy, X-ray diffraction, Raman spectroscopy and finite-element simulations show that Ga₂O₃/SiC/ por-Si/Si(100) provides the most favourable structural characteristics, with reduced defect formation, improved crystalline order and the strongest Raman response, confirming the effectiveness of the SiC/por-Si dual buffer in stress relaxation.These results highlight the potential of engineered buffer systems for reliable, cost-effective integration of wide-bandgap oxides with silicon technology in power electronics, renewable energy and radiation-resistant devices.Within the project, luminescent Nd³⁺ β-diketonate complexes were investigated by optical spectroscopy in combination with theoretical analysis, including Judd-Ofelt/Sinha treatment of the f-f transitions.The data indicate predominantly eight-coordinate Nd³⁺ environments with distorted square-antiprismatic geometries and a non-cubic ligand field, as evidenced by characteristic band splitting and transition intensities.An increase in Nd-O bond covalence correlates with enhanced near-infrared emission.Complexes containing the unsaturated dmhpd ligand show superior luminescent performance, whereas bulky aromatic substituents tend to suppress emission by shielding the lanthanide ion.The main conclusion is that rational variation of β-diketonate ligands provides an effective handle to tune the NIR photophysical properties of Nd³⁺ complexes, making them promising components for optical fibres and precursors for scintillating materials.