Design and technology solutions for developing one-time programmable memory

A large number of modern microcontrollers have integrated non-volatile program memory (mask, one-time programmable, Flash, or EEPROM). Many microchips have additional data memory (EEPROM or Flash). Information in masked read-only memory devices is written during the chip manufacturing process and remains unchanged. The long-standing popularity of masked memory was due to its low cost for high-volume production. Masked memory devices were replaced by fusible-link-based memory chips. The ability to independently write information to them made them suitable for individual and small-scale production. The most significant drawbacks were a high defect rate and the need for special, lengthy thermal conditioning. Without thermal conditioning, data storage reliability was low. One-time programmable memory remains in demand in civilian and special applications. Improvements in manufacturing technologies, increased integration, and improved performance of microchips are driving the search for new memory types and ways to improve existing memory types. The purpose of the study is сreation of a one-time programmable memory element. The insulating layer in the memory element should be silicon oxide. The programming voltage range is from 3,5 to 4,5 V. This paper proposes an original design for a one-time programmable memory cell element in the form of a flat capacitor formed in the bottom of a contact window. Samples of the one-time programmable memory cell elements were manufactured and studied. It was shown that the destruction of the dielectric layer during writing is irreversible. The developed one-time programmable memory cell element design is manufactured using self-alignment technology. This memory cell design is integrated into the standard CMOS manufacturing process for micron and submicron design standards.