Temperature and electron concentration dependences of 1/f noise in Hg1−xCdxTe – evidence for a mobility fluctuations mechanism

RepOD 2026 Dataset Open access

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Authors: G. Cywiński
DOI: 10.18150/2ov4oe
Cited by: 0

Abstract

This is a set of research data related to the article titled " Temperature and electron concentration dependences of 1/f noise in Hg1−xCdxTe – evidence for a mobility fluctuations mechanism", Nanoscale, 2025,17, 7281-7288.README.txt file contains detailed description of all dataset attached

Fields of Study & Subjects

Advanced Semiconductor Detectors and Materials Semiconductor materials and devices Semiconductor materials and interfaces

Publication details

Journal / source
RepOD
Publication date
1 January 2026
Document type
Dataset