Potential of Graphene/AlGaN/GaN heterostructures to study the drag and two-stream instability effects

This is a set of research data related to the article titled: "Potential of Graphene/AlGaN/GaN heterostructures to study the drag and two-stream instability effects" A. Rehman, D.B. But, P. Sai, M. Dub, P. Prystawko, A. Krajewska, G. Cywinski, W. Knap, S. Rumyantsev.README.txt file contains detailed description of all dataset attachedSubmittend to: AIP Advance.The set contains numerical data used to create the next Figures:Figure 2 (a) Output current-voltage characteristics of AlGaN/GaN transistor with graphene serving as a gate. (b) Transfer current-voltage characteristics of the graphene transistor with 2DEG serving as the gate. Figure 3. (a) Graphene drag current at two temperatures as a function of the drive voltage applied to the 2DEG (drain of the AlGaN/GaN transistor). (b) The same as in panel (a), but for a wider drive voltage range and at higher temperatures as well. Dashed line shows the leakage current between conducting layers at T=10 K.Fig. 4 (a) Ratio of the drag to drive currents as a function of temperature. (b) Drag resistance at different temperatures as a function of the drive current. (c) Output current-voltage characteristics of AlGaN/GaN transistor at different temperatures.