Evaluation and Optimization of Novel Graphene Nanosheet FET: Analog/RF Perspectives

Graphene Nano-Sheet Field Effect Transistor (GNSFET) is designed using a new material (graphene) in the channel, marking advancement in Nano-Sheet Field Effect Transistor (NSFET) technology. The device’s analog/Radio Frequency (RF) performance are evaluated with respect to the main geometric parameters of GNSFET, such as the gate-length, the channel-width, and the channel- thickness. Key analog/RF performance metrics, including the following: ION/IOFF ratio, subthreshold-swing SS, transconductance gm, transconductance efficiency gm/Id, output conductance gds, gate capacitance Cgg, cut-off frequency FT, and intrinsic gain Av. Output results reveal that scaling-down Tch to 6 nm, Wch to 14 nm, and Lg to 16 nm enhances the ION/IOFF ratio to 5.2×1011 and reduces SS to 60.05 mV/dec, which creates better switching efficiency. Reducing Tch from 8 nm to 6 nm, and Wch from 18 nm to 12 nm boosts the ION/IOFF ratio by 34.48% and 33.19%, respectively, highlighting the main role of device’s small geometry in improving electrostatic control. Transconductance gm increases by 22.51% when Lg is scaled from 16 nm to 12 nm, while Cgg decreases with reductions in Lg, Wch, and Tch, aligning with graphene’s inherent high carrier mobility. Notably, FT improves by 11.71% under Tch scaling, underscoring graphene’s potential for high-frequency RF applications. Although, intrinsic-gain (Av) benefits from Wch and Tch scaling, it exhibits a significant augmentation of 38.88% when Lg is increased from 12 nm to 16 nm, reflecting a trade-off between gain optimization and speed.