Calculations of emittance measurements via inverse Compton scattering

Recent simulation work has indicated that next generation photoinjectors will be capable of delivering beams with emittances below 100 nm for bunch charges of a few hundred pico-Coulombs. Experimentally validating these results by measuring such emittances is challenging due to the high resolution required. Additionally, in some cases it is desirable for these characterization measurements to be non-destructive, and to have the capability of selecting subsets of the beam. One technique that has been considered is the use of inverse Compton scattering (ICS) spectra to measure the emittance. Here we present simulation results on the use of ICS to measure 50 nm – 500 nm emittances for a 250 pC bunch charge electron beam.