A Field-Driven Growth Model for Uniform Thin-Film Growth

Externally applied electric fields are widely employed during thin-film deposition to im-prove film uniformity, texture and densification. Despite extensive experimental evidence, the physical mechanisms by which such fields influence nucleation, surface diffusion, is-land coalescence and interface stability remain theoretically fragmented. Classical thin-film growth models assume a field-free energetic landscape and therefore provide limited predictive guidance for field-assisted manufacturing strategies. In this work, we introduce the Field-Driven Growth Model (FDGM), a unified theoretical framework that incorporates field–matter interactions directly into the free-energy func-tional governing thin-film growth. By explicitly accounting for effective dipolar coupling arising from field-induced polarization of surface species, predominantly quadratic in the field amplitude and consistent with linear-response polarization, the model consistently modifies the fundamental processes of nucleation, surface diffusion and coalescence. At the continuum scale, the FDGM predicts a field-induced stabilization mechanism that suppresses long-wavelength roughening modes and defines a field-controlled morpho-logical crossover wavelength (field-controlled cutoff). The FDGM demonstrates that field-assisted nucleation bias, anisotropic surface diffusion, field-biased coalescence pathways and morphological stabilization are not independent phenomena, but multiscale manifestations of a single energy-minimization principle act-ing on a field-modified energy landscape. By providing analytical stability criteria and explicit links between external field parameters and morphological outcomes, the model establishes a predictive foundation for the manufacturing of thin films with improved uniformity in advanced thin-film-based devices. The framework is broadly applicable to deposition techniques such as sputtering, pulsed-laser deposition, chemical vapor depo-sition and atomic layer deposition.