Optical Polarization Properties of Defect Emitters in Gallium Nitride

GaN defect quantum emitters constitute a promising platform for single-photon generation in quantum information applications, yet many of their fundamental properties remain poorly understood. In this work, we perform experimental studies of the photoluminescence (PL) polarization of these emitters. Our findings indicate that the PL maintains a high degree of linear polarization across a broad temperature range (10-300 K), with only minor rotations of the polarization axis at intermediate temperatures. We discuss potential physical mechanisms responsible for this behavior and propose directions for future investigations.