"Dependence of the Relaxation Quantum Transistor Electrical Characteristics from the Sizes of its Regions"

"The static characteristics of a relaxation quantum transistor formed from indium antimonide nanowires have been calculated. It is shown that by varying the geometric sizes of the structure regions, it is possible to purposefully change the electrical characteristics of the device. According to the estimates made, the transistor can function in the terahertz frequency range. The calculated power consumption of the device in the cut\u2013off mode is several pW, and in the active mode and saturation mode it is less than 50 nW. Corresponding currents ratio is about . The obtained results indicate the possibility of using a relaxation quantum transistor as a basic element of ultrafast digital circuits with low power consumption."