Polarity reversal of dipole at the SiO2/HZO interface in FeFETs by oxygen scavenging of TiN
Fields of Study & Subjects
Ferroelectric and Negative Capacitance Devices
Semiconductor materials and devices
Ferroelectric and Piezoelectric Materials
Publication details
- Journal / source
- SSRN Electronic Journal
- Publication date
- 1 January 2026
- Document type
- Preprint