Suppression of Charge-Trapping-Induced Hysteresis Enabling Hysteresis-Free Tellurium Nanowire Field Effect Transistors
Fields of Study & Subjects
Nanowire Synthesis and Applications
Ferroelectric and Negative Capacitance Devices
Advancements in Semiconductor Devices and Circuit Design
Publication details
- Journal / source
- SSRN Electronic Journal
- Publication date
- 1 January 2026
- Document type
- Preprint