Features of the formation of the phase composition, electronic structure, and electrical properties of CuxSi1-x (x=9 – 53 at.%) films during ion-beam sputtering
Fields of Study & Subjects
Copper Interconnects and Reliability
Semiconductor materials and interfaces
Electron and X-Ray Spectroscopy Techniques
Publication details
- Journal / source
- SSRN Electronic Journal
- Publication date
- 1 January 2026
- Document type
- Preprint