Effect of Si Doping on Tetragonal Phase of HfO2: A DFT-Based Study with Spin-Polarized Calculations

SSRN Electronic Journal 2026 Preprint Open access

Read full text

Authors: Saurabh Chaudhury, Ruma Rano, Jayanta Kumar Kar

DOI: 10.2139/ssrn.6044679

Cited by: 0

References: 22

Fields of Study & Subjects

Semiconductor materials and devices Advancements in Semiconductor Devices and Circuit Design Ferroelectric and Negative Capacitance Devices

References 22