Nanosheet Field Effect Transistors: Advancing Multi-Gate Devices Towards Sub-5 nm Technology Nodes

SSRN Electronic Journal 2026 Preprint Open access

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Authors: Ridip Gogoi
DOI: 10.2139/ssrn.6143930
Cited by: 0

Fields of Study & Subjects

Advancements in Semiconductor Devices and Circuit Design 2D Materials and Applications Semiconductor materials and devices

Publication details

Journal / source
SSRN Electronic Journal
Publication date
1 January 2026
Language
EN
Document type
Preprint