APPLIED PROJECT: BAGASSE-CARBON ReRAM Development of Electronic-Grade Non-Volatile Resistive Memory (ReRAM) Based on Bagasse-Derived Carbon (2026-2030)

SSRN Electronic Journal 2026 Preprint Open access

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Authors: Bernecer Martinez
DOI: 10.2139/ssrn.6156850
Cited by: 0

Fields of Study & Subjects

Advanced Memory and Neural Computing Ferroelectric and Negative Capacitance Devices Phase-change materials and chalcogenides

Publication details

Journal / source
SSRN Electronic Journal
Publication date
1 January 2026
Language
EN
Document type
Preprint