5 nm Gate Length Field-Effect Transistors Based on InSe/In2Se3 van der Waal Heterojunctions

SSRN Electronic Journal 2026 Preprint Open access

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Authors: Yun-Ya Zhong, Jian‐Qing Dai, Jin Yun Yuan, Da-Wei Deng, Cai-hong Wen

DOI: 10.2139/ssrn.6216062

Cited by: 0

References: 30

Fields of Study & Subjects

2D Materials and Applications Advancements in Semiconductor Devices and Circuit Design Graphene research and applications

References 30