Unraveling Si-doped DX center in AlGaN-Based UVC LEDs Through 2D Cathodoluminescence Mapping
Fields of Study & Subjects
GaN-based semiconductor devices and materials
Luminescence Properties of Advanced Materials
Silicon Carbide Semiconductor Technologies
Publication details
- Journal / source
- SSRN Electronic Journal
- Publication date
- 1 January 2026
- Language
- EN
- Document type
- Preprint