Vertical GaN TG-MOSFET Power Device Model Considering Physical Effects

SSRN Electronic Journal 2026 Preprint Open access

Read full text
Authors: Wenlong Yang, Haozhe Lian, Weijing Liu, Fang Yang, Xiaodong Tang, Wei Bai
DOI: 10.2139/ssrn.6395317
Cited by: 0
References: 15

Fields of Study & Subjects

GaN-based semiconductor devices and materials Silicon Carbide Semiconductor Technologies Advancements in Semiconductor Devices and Circuit Design

Publication details

Journal / source
SSRN Electronic Journal
Publication date
1 January 2026
Language
EN
Document type
Preprint