ELECTRICAL AND MORPHOLOGICAL CHARACTERIZATION OF SOLUTION-PROCESSED GEL PZN-PT PEROVSKITE NANOPARTICLES THIN FILM FOR TRANSISTOR DIELECTRICS

Thin film filed effect transistors (TFTs) have drawn significant attention from scientific community as one of the most attractive for low-cost, large area and flexible electronics.In this context, the development of high-k dielectric materials with additional functional properties is essential for low voltage operating and enhancement of device performance. This work presents the investigation of solution processed Pb(Zn1/3Nb2/3)O3 4.5PbTiO3(PZN PT) perovskite nanoparticles thin films, with and without Mn doping, as gate dielectrics for thin film transistor applications. PZN-PT with 1% Mn doped and undoped PZN-PT films were deposited by spin coating on nanostructured doped n-type silicon substrate to form metal-oxide-semiconductor (MOS) structures with top silver contact. SEM analysis shows Mn doping PZN-PT presents a denser and more homogeneous microstructure compared to undoped. Electrical measurements confirmed transistor operating mode and highlighted the effect of ferroelectric polarization on device behavior.