A Path to III-V Photovoltaic Cost Reduction Combining GaAs (211) Spalling with Halide Vapor Phase Epitaxy

OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information) 2026 Open access

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Authors: Kevin L. Schulte, Strategic Programs Office USDOE Office of Energy Efficiency and Renewable Energy (EERE), Mario Dumont, Anna K. Braun, Nicholas Yoo, Corinne E. Packard, John Simon, Aaron J. Ptak
DOI: 10.2172/3016246
Cited by: 0

Abstract

This presentation is an overview of the following, Spalling on 211 oriented wafers produces flat surface without faceting: 1) Demonstrated spall on entire 2" wafer; 2) GaAs and GaInP grown on 211 wafers by HVPE; and 3) Promising cell with VOC=1.02 V and IQE-1. Next steps: 1) Grow cell on spalled wafer and 2) Growth studies to improve material and cell on 211 substrates.

Fields of Study & Subjects

solar cell performance optimization Silicon and Solar Cell Technologies Semiconductor materials and interfaces

Publication details

Journal / source
OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information)
Publication date
30 January 2026
Language
EN