Solution-Processed Oxide Thin Films for Perovskite Photovoltaics (Final Report)

Read full text
Authors: Renewable Power Office. Solar Energy Technologies Office USDOE Office of Energy Efficiency and Renewable Energy (EERE), Lance M. Wheeler, Cory Perkins
Cited by: 0

Abstract

The overarching goal of the voucher project is to evaluate the suitability of NexTC materials as functional layers in perovskite photovoltaic technology. There are several different perovskite device configurations that are being pursued for commercialization. Most are superstrate configuration (light enters the device through the glass substrate) and can be subdivided into two categories: PIN and NIP. At minimum, PIN devices have a transparent conductor (typically Indium Tin Dioxide [ITO] or Fluorine-Doped Tin Oxide [FTO]) and hole transport layer (HTL) deposited on glass before the perovskite is deposited. Alternatively, NIP devices have a transparent conductor and electron transport layer (ETL) deposited before the perovskite is deposited. NexTC produces several inks that can be deposited to replace or modify the transparent conductor and/or the ETL or HTL, depending on the device. NLR will produce PIN and NIP perovskite devices on substrates that have been coated by NexTC and compare to NLR-standard devices that perform among the best for research labs across the world. The work will ultimately expose NexTC products to the up-and-coming perovskite PV industry.

Fields of Study & Subjects

Perovskite Materials and Applications Thin-Film Transistor Technologies Nanomaterials and Printing Technologies

Publication details

Publication date
20 February 2026
Language
EN