Dielectric-Modulated Negative Capacitance Tunnel FET for Highly Sensitive Biosensing Applications

The biosensing potential of a ferroelectric negative capacitance biosensor tunnel field-effect transistor (FENCB-TFET) is investigated in this chapter using a dielectric modulation technique. The design features nanoscale pores near the source and drain regions to enhance the surface area available for biomolecule immobilisation, therefore directly enhancing electrostatic coupling. Adjustments in turn-on voltage, drain current sensitivity, and current switching ratio affect performance. We evaluated biomolecules with neutral, positive, and negative charges at the control layer and at the insulator edge under a range of dielectric conditions. The study takes into account practical limitations, such as partially filled holes caused by steric hindrance, in addition to perfect sensing. The findings show that the FENCB-TFET is a strong, extremely sensitive competitor for low-power, label-free biosensing.