JYFL-ACCLAB-RADEF_2025-11 Temperature dependence of SEB and SELC sensitivity of SiC power MOSFETs

Ministry of Culture and Education 2026 Dataset Open access

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Authors: K. Niskanen, C. Martinella, Arthur F. Witulski, H. Kettunen, Arto Javanainen
DOI: 10.23729/c73aca35-bb20-4a7b-b658-e05ddabe3a91
Cited by: 0

Abstract

This dataset contains data of heavy ion irradiation tests at RADEF with 16.3 MeV/n ion cocktail. Devices are 3rd gen. SiC MOSFETs (CPM3-1200-0075A, CPM3-0900-0065A and CPM3-1200-0160A) and they were irradiated at different temperatures. Temperature dependence of single event burnout sensitivity and leakage current degradation was observed.

Fields of Study & Subjects

Radiation Effects in Electronics Silicon Carbide Semiconductor Technologies Particle Detector Development and Performance

Publication details

Journal / source
Ministry of Culture and Education
Publication date
4 March 2026
Language
EN
Document type
Dataset