High-Performance IGZO TFT/Perovskite Ultraviolet-Visible Photodetectors for Imaging Application

Photodetectors composed of photodiode-structure devices (PSDs) and thin-film transistors (TFTs) are desirable for imaging applications. Organic-inorganic hybrid lead halide perovskites and indium gallium zinc oxide (IGZO) are considered as potential candidates for high-performance PSDs and TFTs, enabling the fabrication of photodetector with favorable photoelectric conversion capability and on-off characteristics. Herein, we developed an ITO/SnO2/Cs0.22FA0.78Pb(Br0.15I0.85)3/Spiro-OMeT AD/MoO3/IZO self-powered photodiode, which achieved a high responsivity of 0.41 A/W and specific detectivity of$9.46\times 10^{13}$Jones. Furthermore, we fabricated IGZO TFTs using films deposited under optimal sputtering conditions (an argon- to-oxygen ratio of 30: 1, a sputtering pressure of 3 mTorr and a sputtering power of 5 W), demonstrating great electrical performance. Additionally, we integrated the IGZO TFT with perovskite active layers to create a$3\times 3$array, which exhibited a broad spectral response spanning from 350 nm to 700 nm. The photodetector array device based above mentioned perovskite PSD and IGZO TFT achieved a responsivity of 0.25 A/W, a specific detectivity of$6.45 \times 10^{11}$Jones, and an average on-off current ratio of$2.35 \times 10^{2}$. Finally, the array device was successfully utilized for imaging, confirming its potential in photodetection and imaging applications.