Multidimensional Capacitance Characterization of Monolithic Bidirectional GaN HEMTs using Four-Port S-Parameter Measurements

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Authors: Magnus Haitz, Cristino Salcines, Mathias C. J. Weiser, Aline Reck, Ingmar Kallfass
Cited by: 1
References: 12

Publication details

Journal / source
2026 International Power Electronics Conference (IPEC-Nagasaki 2026 - ECCE Asia)
Publisher
IEEE
Pages
1–6
Publication date
31 May 2026