Multidimensional Capacitance Characterization of Monolithic Bidirectional GaN HEMTs using Four-Port S-Parameter Measurements
Publication details
- Journal / source
- 2026 International Power Electronics Conference (IPEC-Nagasaki 2026 - ECCE Asia)
- Publisher
- IEEE
- Pages
- 1–6
- Publication date
- 31 May 2026