Graphene-Based Multilayer Composites as a Promising Solution for Next-Generation EUV Pellicles

ABSTRACT As EUV lithography becomes critical for sub-10 nm patterning, controlling contamination through pellicles is essential to maintain yield. These ultra-thin membranes must be highly transparent to EUV light, mechanically robust, and thermally stable. Conventional materials like silicon nitride offer durability but lack sufficient EUV transmittance and degrade under high radiation. Graphene, with its atomic thickness, excellent transparency, and superior thermal and mechanical properties, emerges as a strong candidate. However, its application is limited by challenges such as radical-induced damage and difficulties in fabricating large, defect-free films. Recent developments in multilayer graphene composites—where graphene is integrated with materials like silicon nitride and molybdenum—address these issues. These hybrid structures enhance durability and stability while enabling precise thickness control through stacked CVD graphene layers. This study investigates the design and fabrication of such graphene-based multilayer pellicles, demonstrating their potential to meet the stringent demands of EUV lithography. The results highlight the feasibility of scalable, high-performance pellicles that combine transparency, thermal resistance, and mechanical strength, paving the way for their use in next-generation semiconductor manufacturing.