Mathematical Modeling of the P-I-N Diode Plasma Dynamics Under Harmonic Excitation Using Perturbation Theory Methods

Read full text
Authors: I. P. Moroz
Cited by: 0
References: 16

Abstract

The processes of electron–hole plasma formation in the active (i) region of semiconductor p-i-n diodes (plasma diodes) and the formation of space charge in the near-contact regions (p-i and n-i contact zones) under the influence of a periodic control signal are considered. A methodology for studying the corresponding processes is proposed, and a mathematical model of the dynamics of the charge-carrier concentration distribution in the system under study is constructed based on the boundary-function method of perturbation theory and the Fourier separation-of-variables method.

Fields of Study & Subjects

Semiconductor materials and interfaces Electrical and Electromagnetic Research Semiconductor materials and devices

Publication details

Journal / source
Mathematical Modeling and Computing
Volume
13
Issue
1
Pages
205–214
Publication date
1 January 2026
Language
EN