Supporting data for “Defect Engineering and Characterization in Wide Band Gap Oxides”

Defect engineering in wide‑bandgap and high‑k oxide materials plays a decisive role in determining their electronic, dielectric, and optoelectronic performance. This thesis presents a systematic investigation of wide bandgap oxides, focusing on how intrinsic and dopant‑induced defects govern deep‑level trapping, dielectric relaxation, and charge transport mechanisms. The data utilized in this thesis were obtained through various characterization techniques, including Cf measurement, DLTS, AFM, Ellipsometry, XPS, AFM and XRD (GiXRD). The project directory is organized into three subfolders, each corresponding to Chapters 5 through 7 of the thesis.