Data for "Gate-tunable spin texture in a Dirac semimetal-ferromagnetic semiconductor heterostructure"

We use a concerted theory-experiment effort to investigate the formation of chiral real space spin texture when the archetypal Dirac semimetal Cd3As2 is interfaced with In1−xMnxAs, a ferromagnetic semiconductor with perpendicular magnetic anisotropy. We combine DFT calculations, the linear response theory for spin susceptibility and micromagnetic simulations to explore the possibility of chiral spin texture in this heterostructure. While a non-zero off-diagonal spin susceptibility in the Cd3As2 layer due to inversion symmetry breaking suggests the presence of Dzyaloshinskii-Moriya interaction (DMI) between local moments in the InMnAs layers, the amplitude may not be strong enough to give a “full” skyrmion texture. Instead, the interace states at the junction may promote a “partial” skyrmion texture. Using electrical magnetoresistance measurements at low temperature, we observe an emergent excess contribution to the transverse magneto-resistance whose behavior is consistent with a topological Hall effect arising from the formation of an interfacial chiral spin texture. This excess Hall voltage varies with gate voltage, indicating a promising electrostatically-tunable platform for understanding the interplay between the helical momentum space states of a Dirac semimetal and chiral real-space spin textures in a ferromagnet.