Molecular Beam Epitaxy Growths of SnSe layers on MgO
Abstract
In this work, we demonstrate the growth of SnSe layers on MgO 100 substrate using molecular beam epitaxy (MBE). We obtain pristine quality SnSe ultrathin layers of thicknesses from 20 nm down to 5 nm, with root-mean-square (RMS) roughness as low as 0.6 nm and full-width-at-half-maximum (FWHM) of 0.1° in SnSe (400) x-ray diffraction (XRD) rocking curve.
Fields of Study & Subjects
2D Materials and Applications
Chalcogenide Semiconductor Thin Films
Crystal Structures and Properties
Publication details
- Journal / source
- ScholarSphere (Penn State Libraries)
- Publication date
- 16 March 2026
- Language
- EN
- Document type
- Dataset