Structural, Morphological, And Optical Properties of ZnO Thin Films Grown on Si Substrates via Ultrasonic Spray Pyrolysis

Based on scientific sources presenting modern semiconductor device fabrication technologies and growth methods, the influence of external factors on ZnO samples was evaluated through various approaches. In this work, ZnO thin films were grown on Si substrates using the ultrasonic spray pyrolysis (USP) method. The physical characteristics of the obtained samples, including the optical bandgap energy and in-situ laser Raman spectroscopy measurements, were investigated. The primary objective of this study was to synthesize ZnO thin films with precise nanometric thicknesses on silicon (Si) substrates and to investigate the influence of substrate temperature, precursor composition, and evaporation rate. Using Ellipsometry, XRD, and SEM, we characterized the film thickness, crystal lattice structure, and morphological evolution during growth.