Angular-independent magnetoresistance in Fe 3 GeTe 2 -based van der Waals spintronic heterostructures

Nano Research 2026 Open access

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Authors: Yuxin Tian, Kun Ye, Yi Wang, Xueqi Guo, Xinyu Gao, Yonghao Sun, Mengfan Zhao, Zhiyan Jia, Fang Zhang, Yong Jiang
DOI: 10.26599/nr.2026.94908859
Cited by: 1
References: 50

Abstract

Abstract Two-dimensional (2D) spintronic devices based on van der Waals (vdW) heterostructures have potential applications in magnetic sensing and data storage. Here, we report vdW heterostructures fabricated by stacking an exfoliated ultrathin black phosphorus (BP) or violet phosphorus (VP) spacer between two exfoliated ferromagnetic Fe3GeTe2 (FGT) electrodes. The devices achieve high magnetoresistance (MR) ratios of 40.4% and 31.5% for the FGT/BP/FGT and FGT/VP/FGT heterostructures at low temperature, respectively. The magnitude of MR can be tuned by bias current and spacer thickness. Moreover, magnetotransport measurements confirm robust spin valve effect, showing angular-independent MR in FGT-based heterostructures. Our work opens a new avenue for the application of monoelemental phosphorus as spacer in novel spintronic devices.

Fields of Study & Subjects

2D Materials and Applications Graphene research and applications Heusler alloys: electronic and magnetic properties

Publication details

Journal / source
Nano Research
Publisher
Tsinghua University Press
Volume
19
Issue
10
Pages
94908859–94908859
Publication date
26 May 2026
Language
EN